The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Dec. 08, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Meng-Hung Lin, Taichung, TW;

Bo-Lun Wu, Taichung, TW;

Po-Yen Hsu, New Taipei, TW;

Ying-Fu Tung, Taichung, TW;

Han-Hsiu Chen, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1266 (2013.01); H01L 27/249 (2013.01); H01L 27/2472 (2013.01); H01L 45/1691 (2013.01);
Abstract

A RRAM and its manufacturing method are provided. The RRAM includes an interlayer dielectric layer, a first bottom contact structure, and a second bottom contact structure formed on a substrate. A first memory cell is formed on the first bottom contact structure. The first memory cell includes a first bottom electrode layer which includes a first conductive region. A pattern in which the first conductive region is vertically projected on the first bottom contact structure is a first projection pattern. A second memory cell is formed on the second bottom contact structure. The second memory cell includes a second bottom electrode layer which includes a second conductive region. A pattern in which the second conductive region is vertically projected on the second bottom contact structure is a second projection pattern. The second projection pattern is different from the first projection pattern.


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