This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2022.
Company Filing History:
Years Active: 2014-2022
Title: Han Geun Yu: Innovator in Semiconductor Technology
Introduction
Han Geun Yu is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of three-dimensional semiconductor memory devices. With a total of 3 patents to his name, his work continues to influence advancements in this critical area of technology.
Latest Patents
Han Geun Yu's latest patents focus on innovative methods for fabricating three-dimensional semiconductor memory devices. These methods involve forming a mold structure on a substrate that includes channel regions and a non-channel region between the channel regions. A multilayered mask layer is then formed on the mold structure, which includes a first mask layer, an etch stop layer, and a second mask layer that are sequentially stacked. The multilayered mask layer features mask holes that expose the mold structure in the channel regions, along with dummy mask holes that expose the first mask layer in the non-channel region. The process also includes etching the mold structure using the multilayered mask layer as an etch mask to create channel holes in the channel regions.
Career Highlights
Han Geun Yu is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced memory devices that are essential for modern computing.
Collaborations
Throughout his career, Han has collaborated with talented individuals such as Daehyun Jang and Eunsung Kim. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.
Conclusion
Han Geun Yu is a key figure in the semiconductor industry, with a focus on innovative fabrication methods for memory devices. His contributions and collaborations continue to shape the future of technology.