The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Apr. 30, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Han Geun Yu, Seoul, KR;
Daehyun Jang, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Methods of fabricating a three-dimensional semiconductor memory device are provided. A method may include forming a mold structure on a substrate including channel regions and a non-channel region between the channel regions, and forming, on the mold structure, a multilayered mask layer including a first mask layer, an etch stop layer, and a second mask layer that are sequentially stacked. The multilayered mask layer may include mask holes exposing the mold structure in the channel regions, dummy mask holes exposing the first mask layer in the non-channel region, and buffer spacers covering sidewalls of the second mask layer exposed by the mask holes and the dummy mask holes. The method may include etching the mold structure using the multilayered mask layer as an etch mask to form channel holes in the channel regions.