Hakyoon Ahn

Title: Hakyoon Ahn: Innovator in Semiconductor Technology

Introduction

Hakyoon Ahn is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Among his latest patents, Hakyoon Ahn has developed a semiconductor device that includes a metal pattern on a semiconductor substrate. This device features an etch stop layer covering the metal pattern, which consists of a sequentially stacked first insulation layer, second insulation layer, and third insulation layer. Additionally, it incorporates an interlayer dielectric layer on the etch stop layer and a contact plug that penetrates both the interlayer dielectric layer and the etch stop layer, connecting to the metal pattern. The first insulation layer contains a metallic element and nitrogen, while the second insulation layer includes carbon. The third insulation layer is designed without any metallic element and carbon, showcasing Ahn's innovative approach to semiconductor design.

Career Highlights

Hakyoon Ahn is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His expertise and innovative mindset have positioned him as a key player in the industry.

Collaborations

Throughout his career, Hakyoon Ahn has collaborated with talented individuals such as Hongsik Shin and Sanghyun Lee. These collaborations have further enriched his work and contributed to the advancement of semiconductor technologies.

Conclusion

Hakyoon Ahn's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the field. His innovative designs continue to shape the future of semiconductor devices.