The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Mar. 04, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hongsik Shin, Suwon-si, KR;
Sanghyun Lee, Suwon-si, KR;
Hakyoon Ahn, Suwon-si, KR;
Seonghan Oh, Suwon-si, KR;
Youngmook Oh, Suwon-si, KR;
Abstract
A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.