Haiwen Fang

Title: The Innovative Mind of Haiwen Fang

Introduction: Haiwen Fang is a prominent inventor based in Wuhan, China. He is known for his contributions to the field of memory devices, particularly in the area of multi-pass programming techniques. With a focus on enhancing memory performance, Fang has made significant strides in the technology sector.

Latest Patents: Haiwen Fang holds a patent titled "Negative gate stress operation in multi-pass programming and memory device thereof." This innovative memory device includes an array of memory cells arranged in multiple rows, with a peripheral circuit designed to perform multi-pass programming on selected rows of memory cells. The programming process involves several passes, each consisting of a programming operation followed by a verification operation. Notably, during non-last programming passes, the peripheral circuit executes a negative gate stress operation on each memory cell, optimizing the programming process.

Career Highlights: Fang is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern computing.

Collaborations: Throughout his career, Haiwen Fang has collaborated with talented colleagues, including Zhipeng Dong and Li Xiang. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion: Haiwen Fang's contributions to memory technology exemplify the spirit of innovation in the field. His patent and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight his commitment to advancing memory device technology.