Boise, ID, United States of America

Haining Yang

This inventor holds 14 USPTO granted patents. Top assignee: Micron Technology Incorporated. Active years: 2002-2008.


% Patents Active = 50.0

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 166(Granted Patents)


Location History:

  • Boise, ID (US) (2002 - 2006)
  • Poughkeepsie, NY (US) (2005 - 2008)

Company Filing History:


Years Active: 2002-2008

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14 patents (USPTO):Explore Patents

Title: The Innovative Journey of Haining Yang

Introduction

Haining Yang is a distinguished inventor based in Boise, Idaho, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 14 patents, Yang has established a reputation for creating innovative solutions that advance the capabilities of integrated circuits and semiconductor materials.

Latest Patents

Among Haining Yang's latest inventions are two noteworthy patents. The first, titled "Methods of Forming Conductive Materials," presents a groundbreaking method for assembling a metal-comprising mass used in semiconductor constructions. This process involves providing a semiconductor substrate and a metallo-organic precursor placed nearby. By exposing the precursor to a reducing atmosphere, metal is released and subsequently deposited over the semiconductor substrate. This invention also encompasses capacitor constructions and methods for their formation.

The second patent, "Integrated Circuits with Rhodium-Rich Structures," reveals a novel structure and method for creating capacitors used in integrated circuits. This approach features a rhodium-rich structure complemented by a rhodium oxide layer, with a capacitor dielectric in direct contact with the rhodium oxide and a top electrode above it. The rhodium-rich structure may include various rhodium alloys, while the capacitor dielectric is designed to maintain a high dielectric constant.

Career Highlights

Haining Yang currently works for Micron Technology Incorporated, a leader in semiconductor solutions. Throughout his career, he has played a pivotal role in advancing the technology behind semiconductor devices and capacitors, helping to facilitate improvements in performance and efficiency.

Collaborations

In his innovative pursuits, Haining Yang has collaborated with notable colleagues, including Gurtej S Sandhu and Dan Gealy. Together, they have fostered an environment of creativity and advancement in the technological landscape, combining their expertise to push the boundaries of semiconductor research and development.

Conclusion

Haining Yang's contributions to the field of semiconductor technology exemplify the power of innovation and collaboration. With his inventive spirit and dedication, Yang continues to shape the future of electronics through his groundbreaking patents and collaborative efforts at Micron Technology Incorporated. His work not only enhances the performance of integrated circuits but also paves the way for future discoveries in the realm of conductive materials.

Profile summary based on public USPTO records.
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