Palo Alto, CA, United States of America

Haim Gilboa

This inventor holds 2 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 1992-1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haim Gilboa. Retrieved from https://idiyas.com/inventor/haim-gilboa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 108(Granted Patents)


Company Filing History:


Years Active: 1992-1993

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Haim Gilboa: Innovator in Semiconductor Technology

Introduction

Haim Gilboa is a notable inventor based in Palo Alto, CA, who has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on enhancing processes in physical vapor deposition and the formation of stoichiometric metal compounds.

Latest Patents

One of Haim Gilboa's latest patents is a method for preparing a shield to reduce particles in a physical vapor deposition process. This innovative method involves sputter-etch cleaning the shield to improve the adhesion of deposits. The cleaning process loosens contamination that may act as a diffusion barrier, preventing proper bonding. Additionally, the creation of micro-roughness increases nucleation sites, minimizing the formation of interface voids. The shield may also undergo bead blasting, which irregularizes its surface and enhances interface cracking on a microscopic scale, resulting in less flaking.

Another significant patent by Gilboa is the process and apparatus for forming a stoichiometric layer of a metal compound on a semiconductor wafer. This invention utilizes reactive sputtering of a metal target in the presence of a reactive gas. By adjusting the negative potential on the metal target, the supply of sputtered metal atoms can be controlled, ensuring a proper stoichiometric ratio with the reactive gas. This careful management allows for the effective formation of the desired metal compound on the wafer.

Career Highlights

Haim Gilboa is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work at Applied Materials has positioned him as a key player in advancing technologies that are critical to modern electronics.

Collaborations

Throughout his career, Haim has collaborated with notable colleagues, including Roderick Craig Mosely and Donald M Mintz. These collaborations have further enriched his contributions to the field.

Conclusion

Haim Gilboa's innovative patents and work at Applied Materials, Inc. highlight his significant role in the semiconductor industry. His advancements in physical vapor deposition and stoichiometric layer formation continue to influence technology today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…