The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 1993

Filed:

Jun. 08, 1992
Applicant:
Inventors:

Humoyoun Talieh, Santa Clara, CA (US);

Haim Gilboa, Palo Alto, CA (US);

Donald M Mintz, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; B44C / ; B24B / ;
U.S. Cl.
CPC ...
20419232 ; 51319 ; 51320 ; 156643 ; 20419235 ; 20429811 ;
Abstract

In a method for preparing a shield for use in a physical vapor deposition process, the shield is sputter-etch cleaned to increase adhesion of deposits in the physical vapor deposition process. The sputter-etch cleaning serves to loosen contamination which may for a diffusion barrier and prevent the deposits from bonding to the shield. Also, the sputter-etch cleaning creates a high degree of micro-roughness. The roughness allows for an increase in nucleation sites which minimize the formation of interface voids. In addition to sputter-etch cleaning the shield may be bead blasted. The bead blasting makes the surface of the shield irregular. This enhances interface cracking of deposited material on a microscopic scale, resulting in less flaking.


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