Haijun Lou

Title: Haijun Lou: Innovator in Tunneling Field Effect Transistors

Introduction

Haijun Lou is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of electronics, particularly in the development of tunneling field effect transistors. His innovative work has garnered attention in the scientific community and has implications for future electronic devices.

Latest Patents

Haijun Lou holds a patent for a tunneling field effect transistor. This invention comprises a gate electrode layer, a gate dielectric layer, a source region, a connected region, and a drain region. The source region includes a first source region and a second source region, with the second source region further divided into an inner layer source region and an outer layer source region. The unique design features a curved contact surface between the inner and outer layer source regions, which enhances the contact area and increases the probability of tunneling of carriers. This results in improved On-state current and current drive capability.

Career Highlights

Haijun Lou is affiliated with Peking University, where he continues to engage in research and development in the field of electronics. His work has not only advanced the understanding of tunneling field effect transistors but has also paved the way for future innovations in semiconductor technology.

Collaborations

Some of his notable coworkers include Xinnan Lin and Dan Li. Their collaborative efforts contribute to the ongoing research and development in the field, enhancing the impact of their collective work.

Conclusion

Haijun Lou's contributions to the field of tunneling field effect transistors exemplify the innovative spirit of modern inventors. His work at Peking University and his patented technology are significant advancements in electronics, showcasing the potential for future developments in this area.