Haihe Liang

Title: Innovations by Haihe Liang in Semiconductor Technology

Introduction

Haihe Liang is a notable inventor based in St. Peters, Missouri, who has made significant contributions to the field of semiconductor technology. His innovative methods for stripping and cleaning semiconductor structures have the potential to enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Haihe Liang holds a patent for "Methods for stripping and cleaning semiconductor structures." This patent discloses methods for removing an oxide film and cleaning silicon-on-insulator structures. The techniques involve immersing the silicon-on-insulator structure in a stripping bath to effectively strip the oxide film from its surface. Following this, the stripped structure is treated in an ozone bath, which comprises ozone, to further enhance its cleanliness. Finally, the ozone-treated structure is immersed in an SC-1 bath containing ammonium hydroxide and hydrogen peroxide for thorough cleaning.

Career Highlights

Haihe Liang is associated with Globalwafers Co., Ltd., a company recognized for its advancements in the semiconductor industry. His work at Globalwafers has allowed him to apply his innovative ideas and contribute to the development of cutting-edge semiconductor technologies.

Collaborations

Haihe Liang has collaborated with notable coworkers, including Qingmin Liu and Junting Yang, who share a commitment to advancing semiconductor technology. Their collective efforts contribute to the innovative environment at Globalwafers Co., Ltd.

Conclusion

Haihe Liang's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to improving manufacturing processes. His work continues to influence the semiconductor industry positively.