Haifeng Sheng

Title: Haifeng Sheng: Innovator in Semiconductor Devices

Introduction

Haifeng Sheng is a prominent inventor based in Piscataway, NJ (US). He has made significant contributions to the field of semiconductor devices, holding a total of 2 patents. His work focuses on the development of advanced photodetectors and related technologies.

Latest Patents

Haifeng Sheng's latest patents include innovative semiconductor devices such as a Schottky UV photodetector. This device is fabricated on n-type ZnO and MgZnO epitaxial films. The ZnO and MgZnO films are grown on R-plane sapphire substrates, and the Schottky diodes are created using silver and aluminum as Schottky and ohmic contact metals, respectively. The design features circular patterns, where the inner circle serves as the Schottky contact, and the outer ring functions as the ohmic contact. The Ag Schottky contact patterns are produced using standard liftoff techniques, while the Al ohmic contact patterns are formed through wet chemical etching. These detectors exhibit low frequency photoresponsivity, high-speed photoresponse, lower leakage current, and low noise performance compared to their photoconductive counterparts. This invention also has applications in optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs), and more.

Career Highlights

Haifeng Sheng is affiliated with Rutgers, the State University of New Jersey, where he continues to advance his research in semiconductor technology. His work has garnered attention for its innovative approach and practical applications in various fields.

Collaborations

Some of his notable coworkers include Yicheng Lu and Sriram Muthukumar, who contribute to the collaborative research environment at Rutgers.

Conclusion

Haifeng Sheng is a key figure in the development of semiconductor devices, with a focus on enhancing the performance of photodetectors. His contributions are paving the way for future innovations in the field.