The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2008

Filed:

Jan. 25, 2005
Applicants:

Yicheng LU, East Brunswick, NJ (US);

Haifeng Sheng, Piscataway, NJ (US);

Sriram Muthukumar, Highland Park, NJ (US);

Nuri William Emanetoglu, Woodbury, NJ (US);

Jian Zhong, Piscataway, NJ (US);

Shaohua Liang, Somerset, NJ (US);

Inventors:

Yicheng Lu, East Brunswick, NJ (US);

Haifeng Sheng, Piscataway, NJ (US);

Sriram Muthukumar, Highland Park, NJ (US);

Nuri William Emanetoglu, Woodbury, NJ (US);

Jian Zhong, Piscataway, NJ (US);

Shaohua Liang, Somerset, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgZnO epitaxial films. The ZnO and MgZnO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgZnO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.


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