Company Filing History:
Years Active: 2013
Title: Haibiao Yao: Innovator in Semiconductor Manufacturing
Introduction
Haibiao Yao is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in device fabrication.
Latest Patents
Haibiao Yao holds a patent for a "Method for manufacturing a semiconductor device." This manufacturing method involves depositing a spacer material on a semiconductor substrate, which includes both NMOS and PMOS regions, each having a gate formed thereon. The process includes covering the NMOS region with a first mask, forming a spacer for the PMOS gate by etching the spacer material, and creating a recess in the PMOS region. Additionally, it involves growing SiGe or SiGe with in-situ-doped B in the recess to form a PMOS source/drain region. The method further includes performing anisotropic wet etching on the recess and forming a spacer for the NMOS gate by etching the spacer material, ensuring that the spacers for the PMOS and NMOS gates have different critical dimensions.
Career Highlights
Haibiao Yao is associated with Semiconductor Manufacturing International Corporation, a leading company in the semiconductor industry. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.
Collaborations
He has collaborated with notable coworkers, including Yonggen He and Jingang Wu, contributing to various projects that advance semiconductor technology.
Conclusion
Haibiao Yao's innovative methods in semiconductor manufacturing demonstrate his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the development of efficient semiconductor devices.