Hong Kong, China

Hai Xia

This inventor holds 1 USPTO granted patent. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hai Xia. Retrieved from https://idiyas.com/inventor/hai-xia-n26qeb4s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Hai Xia

Introduction

Hai Xia is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of electroplating through his innovative methods. With a focus on enhancing the efficiency and accuracy of additive concentration analysis, his work has implications for various industrial applications.

Latest Patents

Hai Xia holds a patent for a method of analyzing at least two inhibitors simultaneously in a plating bath. This invention provides an accurate, fast, and cost-effective method for determining the additive concentrations of at least two inhibitors simultaneously in an electroplating bath by using different electrical load conditions. The method is designed to effectively determine additive concentrations during on-line feedback control, allowing for adjustments to maintain the concentrations within pre-defined limits during device production. He has 1 patent to his name.

Career Highlights

Hai Xia is associated with the Hong Kong Applied Science and Technology Research Institute Company, Limited. His work at this institution has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Yaofeng Sun and Minghui Gao. Their collective expertise contributes to the advancement of research and innovation in their respective areas.

Conclusion

Hai Xia's innovative methods in electroplating demonstrate his commitment to improving industrial processes. His contributions are valuable to the field and highlight the importance of research and development in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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