Hae-won Choi

Title: Hae-won Choi and Semiconductor Device Innovation.

Introduction

Hae-won Choi is an inventor associated with Semes Co., Ltd. in Cheonan, South Korea. Her work includes a patent for a semiconductor device and a method of manufacturing it.

Latest Patents

The provided information lists one patent for Choi: “Semiconductor Device and Method of Manufacturing the Same.” The invention describes forming a buried gate electrode within trenches in a semiconductor substrate. Its manufacturing process repeats a cycle combining atomic layer deposition (ALD), which adds conductive material, and atomic layer etching (ALE), which preferentially removes material near the trenches and their upper edges. This approach is designed to shape the conductive layer within the trenches.

Career Highlights

Choi’s listed patent reflects work on semiconductor fabrication, particularly the formation of buried gate electrodes. The supplied information associates her with Semes Co., Ltd., a company based in South Korea.

Collaborations

The available details identify Semes Co., Ltd. as Choi’s company affiliation. They do not specify additional collaborators or research partners.

Conclusion

Hae-won Choi’s listed invention focuses on using repeated deposition and etching steps to manufacture buried gate electrodes in semiconductor devices, representing a contribution to semiconductor fabrication technology.