Hsin Chu, Taiwan

H J Chang

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1998-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: H J Chang. Retrieved from https://idiyas.com/inventor/h-j-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: H J Chang: Innovator in Ion Implantation Technology

Introduction

H J Chang is a notable inventor based in Hsin Chu, Taiwan. He has made significant contributions to the field of ion implantation technology, particularly through his innovative patents. With a total of 2 patents, Chang has demonstrated his expertise and commitment to advancing technology in this specialized area.

Latest Patents

One of H J Chang's latest patents is focused on a source inner shield for the Eaton NV-10 high current implanter. This invention involves a plurality of removable shields designed for use with ion sources in ion implanters. The shields are specifically engineered to fit over the extraction electrode assembly, the sides of the interior walls, and the cold-plate inside an ion source chamber. They are easily mountable and dismountable by maintenance personnel. The shields effectively protect the insides of the ion source from contamination by toxic materials emanating from the ionization source. Additionally, a method for cleaning the shields outside the ion source is disclosed, which involves bead blasting followed by washing with deionized water and rinsing with isopropyl alcohol. This innovation has been shown to reduce the turn-around time for preventive maintenance of an ion source in an ion implanter by a factor of four.

Career Highlights

H J Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to work on advancements in semiconductor technology. His role at this leading company allows him to collaborate with other experts in the field and contribute to cutting-edge innovations.

Collaborations

Chang has worked alongside his coworker, Fu-Kang Tien, to further enhance the development of ion implantation technologies. Their collaboration has been instrumental in driving forward the innovations that benefit the semiconductor industry.

Conclusion

H J Chang's contributions to ion implantation technology through his patents highlight his role as a key innovator in the field. His work not only improves the efficiency of ion implanters but also sets a standard for future advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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