Gyung-jin Min

Title: Gyung-jin Min: Innovator in Semiconductor Technology

Introduction

Gyung-jin Min is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to polysilicon nodes.

Latest Patents

Gyung-jin Min holds a patent for a "Method for forming a polysilicon node in a semiconductor device." This invention involves the formation of a self-aligned contact hole in a cell area of a semiconductor device. A polysilicon layer is then created on both the cell area and a peripheral circuit area. The process includes a first etch back using a reactant etching gas, such as Cl gas, which has a high etching rate with respect to the polysilicon layer. This first etch back is halted before exposing the top surface of a capping layer in the peripheral circuit area, leaving a thin polysilicon film on the capping layer. Subsequently, a second etch back process is performed to create a polysilicon node that fills the self-aligned contact hole in the cell area, utilizing an etching reactant gas like HBr gas, which has a high etching selectivity of polysilicon compared to the capping layer.

Career Highlights

Gyung-jin Min is currently employed at Samsung Electronics Co., Ltd., where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.

Collaborations

He has collaborated with notable colleagues, including Wan-jae Park and Jeong-sic Jeon, contributing to various projects within the semiconductor field.

Conclusion

Gyung-jin Min's innovative work in semiconductor technology, particularly his patent on polysilicon nodes, showcases his expertise and commitment to advancing the industry. His contributions are vital for the ongoing development of efficient semiconductor devices.