The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
May. 09, 2001
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A self-aligned contact hole is formed in a cell area of a semiconductor device, and then a polysilicon layer is formed on both the cell area and a peripheral circuit area. A first etch back process is performed using a reactant etching gas, such as Cl,gas, having a high etching rate with respect to the polysilicon layer. This first etch back process on the polysilicon layer is stopped before exposing the top surface of a capping layer in the peripheral circuit area, thereby leaving a thin polysilicon film on the capping layer. A second etch back process is then performed to form a polysilicon node filling the self-aligned contact hole in the cell area. In the second etch back process, an etching reactant gas, such as HBr gas, is used, which has a high etching selectivity of polysilicon with respect to the capping layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile