Gunpo-si, South Korea

Gyuhwan Ahn

USPTO Granted Patents = 4 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2024

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4 patents (USPTO):

Title: Gyuhwan Ahn: Innovator in Semiconductor Technology

Introduction

Gyuhwan Ahn is a prominent inventor based in Gunpo-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative designs and manufacturing methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Gyuhwan Ahn's latest patents is titled "Semiconductor device including passivation patterns." This invention describes a semiconductor device that features a first active pattern on a substrate, a device isolation layer, and a first passivation pattern. The design includes a gate electrode and a gate dielectric layer, which work together to improve the device's functionality. Another notable patent is the "Method of manufacturing multi-channel field effect transistors." This patent outlines a semiconductor device with multiple active patterns and device isolation layers, emphasizing the importance of trench widths in device performance.

Career Highlights

Gyuhwan Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role involves research and development in semiconductor technologies, where he applies his expertise to create cutting-edge solutions. His contributions have been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Gyuhwan Ahn has collaborated with several talented individuals in his field, including Sung Soo Kim and Chaeho Na. These collaborations have fostered innovation and have led to the successful development of various semiconductor technologies.

Conclusion

Gyuhwan Ahn is a distinguished inventor whose work in semiconductor technology has made a significant impact. His patents reflect his commitment to innovation and excellence in the field. His contributions continue to shape the future of semiconductor devices.

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