The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Jun. 16, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Gyuhwan Ahn, Gunpo-si, KR;

Sung Soo Kim, Hwaseong-si, KR;

Chaeho Na, Changwon-si, KR;

Woongsik Nam, Seoul, KR;

Donghyun Roh, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/76229 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes first and second active patterns on a substrate, the first and second active patterns adjacent to each other in a first direction with a first trench between the first and second active patterns, third and fourth active patterns on the substrate, the third and fourth active patterns adjacent to each other in the first direction with a second trench between the third and fourth active patterns. The semiconductor device includes a first device isolation layer in the first trench, and a second device isolation layer in the second trench. A width of the second trench in the first direction is greater than a width of the first trench in the first direction. The second device isolation layer includes a first protrusion and a second protrusion which protrude from a top surface of the second device isolation layer.


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