Gyeonggi-do, South Korea

Gyoung-Ho Buh

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 57(Granted Patents)


Location History:

  • Suwon-si, KR (2008)
  • Gyeonggi-do, KR (2009 - 2010)

Company Filing History:


Years Active: 2008-2010

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4 patents (USPTO):Explore Patents

Title: Gyoung-Ho Buh: Innovator in NAND-Type Flash Memory Technology

Introduction

Gyoung-Ho Buh is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in NAND-type flash memory devices. With a total of 4 patents to his name, Buh continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

One of Gyoung-Ho Buh's latest patents focuses on NAND-type flash memory devices that include selection transistors with an anti-punchthrough impurity region. This invention provides a NAND-type flash memory device that features first and second impurity regions formed in a semiconductor substrate. The device also includes first and second selection gate patterns positioned between these impurity regions. Additionally, the invention incorporates a first anti-punchthrough impurity region that surrounds the first impurity region, enhancing the device's performance.

Another notable patent involves a semiconductor device that includes carrier accumulation layers. This device features a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region. The design includes a surface insulation layer directly on the source/drain region, which is crucial for improving the efficiency and functionality of the semiconductor device.

Career Highlights

Gyoung-Ho Buh is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to collaborate with some of the brightest minds in the industry, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Buh has worked alongside talented colleagues such as Yu-Gyun Shin and Guk-hyon Yon. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking developments in their field.

Conclusion

Gyoung-Ho Buh is a key figure in the advancement of NAND-type flash memory technology. His innovative patents and contributions to Samsung Electronics Co., Ltd. highlight his commitment to pushing the boundaries of semiconductor technology. His work continues to influence the industry and pave the way for future innovations.

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