The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Aug. 30, 2005
Gyoung-ho Buh, Gyeonggi-do, KR;
Yu-gyun Shin, Gyeonggi-do, KR;
Sang-jin Hyun, Gyeonggi-do, KR;
Guk-hyon Yon, Gyeonggi-do, KR;
Gyoung-Ho Buh, Gyeonggi-do, KR;
Yu-Gyun Shin, Gyeonggi-do, KR;
Sang-Jin Hyun, Gyeonggi-do, KR;
Guk-Hyon Yon, Gyeonggi-do, KR;
Abstract
Semiconductor devices having a transistor and methods of fabricating such devices are disclosed. The device may include a gate pattern formed on a substrate, spacers formed on sidewalls of the gate pattern, a surface insulation layer that may contact the substrate is interposed between the spacers and the substrate. An inversion layer is provided in the surface region of the substrate under the surface insulation layer. The surface insulation layer is formed of a material generating large quantities of surface states at an interface between the substrate and the surface insulation layer.