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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Guk-hyon Yon

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guk-hyon Yon. Retrieved from https://idiyas.com/inventor/guk-hyon-yon-sw43cch0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4

% Patents Active = 25.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal4 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2011

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4 patents (USPTO):Explore Patents
1. 7871897 - Method of forming shallow trench isolation regions in devices with NMOS and PMOS regions (2011-01-18),
2. 7683421 - NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same (2010-03-23),
3. 7514744 - Semiconductor device including carrier accumulation layers (2009-04-07),
4. 7492006 - Semiconductor transistors having surface insulation layers and methods of fabricating such transistors (2009-02-17),

Title: Guk-hyon Yon: Innovator in Semiconductor Technology

Introduction

Guk-hyon Yon is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on methods and devices that enhance the performance and efficiency of semiconductor components.

Latest Patents

One of Guk-hyon Yon's latest patents is a method of forming shallow trench isolation regions in devices with NMOS and PMOS regions. This innovative technique involves creating a mask pattern on a semiconductor substrate, defining various regions, and forming trenches that enhance device isolation. Another notable patent is related to NAND-type flash memory devices, which includes selection transistors with an anti-punchthrough impurity region. This invention improves the structure and functionality of flash memory devices, ensuring better performance and reliability.

Career Highlights

Guk-hyon Yon is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of advanced technologies that are essential in modern electronics.

Collaborations

Throughout his career, Guk-hyon Yon has collaborated with several talented individuals, including Gyoung-Ho Buh and Sun-Ghil Lee. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Guk-hyon Yon is a distinguished inventor whose work in semiconductor technology has made a lasting impact on the industry. His innovative patents and contributions to Samsung Electronics Co., Ltd. highlight his role as a key player in advancing electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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