The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jul. 21, 2006
Gyoung-ho Buh, Suwon-si, KR;
Chang-woo Ryoo, Hwaseong-si, KR;
Yu-gyun Shin, Seongnam-si, KR;
Tai-su Park, Hwaseong-si, KR;
Jin-wook Lee, Suwon-si, KR;
Gyoung-Ho Buh, Suwon-si, KR;
Chang-Woo Ryoo, Hwaseong-si, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Tai-Su Park, Hwaseong-si, KR;
Jin-Wook Lee, Suwon-si, KR;
Abstract
A method of forming a semiconductor device includes forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate, and isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas. The first source gas includes n-type or p-type impurity elements, and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region.