Gyeonggi-do, South Korea

Gyeongcheol Park

This inventor holds 1 USPTO granted patent. Top assignee: Skhynix Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gyeongcheol Park. Retrieved from https://idiyas.com/inventor/gyeongcheol-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Gyeongcheol Park: Innovator in Memory Device Technology

Introduction

Gyeongcheol Park is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of memory devices, particularly through his innovative patent.

Latest Patents

Gyeongcheol Park holds a patent titled "Recovery operation applying a recovery voltage via wake-up pulse for increasing a residual polarization of memory cells." This invention involves a memory device that includes a memory cell array with multiple memory cells. The device features a peripheral circuit designed to perform a recovery operation by applying a recovery voltage to enhance the residual polarization of the memory cells. Additionally, it is configured to execute a normal operation by applying a driving voltage for reading or writing data. The control logic manages the transition from the recovery operation to the normal operation when powered up.

Career Highlights

Gyeongcheol Park is currently employed at SK Hynix Inc., a leading semiconductor manufacturer. His work focuses on advancing memory technology, which is crucial for modern computing applications.

Collaborations

He collaborates with talented coworkers, including Minchul Sung and Seiyon Kim, who contribute to the innovative environment at SK Hynix Inc.

Conclusion

Gyeongcheol Park's contributions to memory device technology through his patent demonstrate his expertise and commitment to innovation in the field. His work continues to influence advancements in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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