The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Oct. 28, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Gyeongcheol Park, Gyeonggi-do, KR;

Minchul Sung, Gyeonggi-do, KR;

Seiyon Kim, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0629 (2013.01); G06F 3/0673 (2013.01); G11C 5/148 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of memory cells; a peripheral circuit configured to perform a recovery operation of applying a recovery voltage to the memory cells for increasing a residual polarization of the memory cells and configured to perform a normal operation of applying a driving voltage to the memory cells for reading data from the memory cells or writing data into the memory cells; and a control logic configured to control, when powered up, the peripheral circuit to perform the recovery operation and then perform the normal operation.


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