Suwon, South Korea

Gwangjun Kim

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gwangjun Kim. Retrieved from https://idiyas.com/inventor/gwangjun-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Gwangjun Kim - Innovator in Semiconductor Technology

Introduction

Gwangjun Kim is an inventor based in Suwon-si, South Korea. He is known for his contributions to the field of semiconductor technology. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Gwangjun Kim has filed several notable patent applications, including:

1. **Integrated Circuit Device Including a Field-Effect Transistor** - This application describes an integrated circuit device that features a fin-type active region on a substrate, a nanosheet on the active region, and a gate line that overlaps the nanosheet. The design includes a source/drain region that contacts the nanosheet and an interface insulating film with an inner spacer portion.

2. **Semiconductor Device and Method of Manufacturing Semiconductor Device** - This application outlines a semiconductor device that consists of a substrate with an active pattern, multiple channel layers, and a gate structure. The device also includes source/drain patterns with a semiconductor liner layer and a semiconductor filling layer, highlighting the use of silicon-germanium and germanium in its construction.

Conclusion

Gwangjun Kim's work in semiconductor technology showcases his innovative approach to integrated circuit design and manufacturing processes. His latest patent applications reflect his commitment to advancing the field, even as he seeks to secure his first granted patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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