The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Aug. 21, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Pilkwang Kim, Suwon-si, KR;
Seunghyun Song, Hwaseong-si, KR;
Yoonsuk Kim, Suwon-si, KR;
Gwangjun Kim, Suwon-si, KR;
Jaemin Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an active region, a plurality of channel layers spaced apart from each other on the active region, a gate structure including a gate dielectric layer and a gate electrode, and source/drain regions on both sides of the gate structure. The gate structure includes an upper portion and lower portions. A first lower portion of the lower portions has a first lower surface, a first upper surface, and first and second side surfaces. Each of the first and second side surfaces includes a first inclined portion sloped at a first acute angle from the first lower surface and a second inclined portion sloped at a second acute angle from the first upper surface. The gate dielectric layer includes portions disposed between the gate electrode and the plurality of channel layers and between the gate electrode and the source/drain regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile