Company Filing History:
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1 out of 131,611 
Years Active: 2018-2023
Title: Gwangguk An: Innovator in Memory Devices and Magnetic Structures
Introduction
Gwangguk An is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices and magnetic structures, holding a total of 3 patents. His innovative work has implications for the future of data storage and processing technologies.
Latest Patents
One of Gwangguk An's latest patents is a variable resistance memory device. This device includes a plurality of memory cells arranged on a substrate, with each memory cell featuring a selection element pattern and a variable resistance pattern. The selection element pattern consists of a first selection element made from a chalcogenide material and a second selection element made from a metal oxide, which is coupled to the first selection element.
Another notable patent is for a magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA). This structure includes an oxide-based PMA-inducing layer and a magnetic element. The MTJ structure is designed to enhance performance by generating perpendicular coupling between layers, which is crucial for advanced magnetic applications.
Career Highlights
Gwangguk An has worked with esteemed organizations such as the Industry-University Cooperation Foundation at Hanyang University and Samsung Electronics. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects.
Collaborations
Some of Gwangguk An's notable coworkers include Jinpyo Hong and Ja Bin Lee. Their collaborative efforts have contributed to the advancement of technology in their respective fields.
Conclusion
Gwangguk An's innovative patents and career achievements highlight his significant role in the development of advanced memory devices and magnetic structures. His work continues to influence the technology landscape, paving the way for future innovations.