Industry-University Cooperation Foundation Hanyang University

Samsung Electronics Co., Ltd.

Gwangguk An

Jinpyo Hong

Jinwoo Lee

Kwangmin Park

Dongho Ahn

Zhe Wu

Ja Bin Lee

Seung-Geun Yu

Jabin Lee

A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.

Variable resistance memory device

Disclosed herein are a magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) and a magnetic element including the same. The MTJ structure with PMA includes a substrate, a perpendicular magnetic anisotropic inducing layer configured to be disposed on the substrate and including an oxide-based material, a perpendicular antiferromagnetic layer configured to be disposed on the perpendicular magnetic anisotropic inducing layer and including an antiferromagnetic material, a first ferromagnetic layer configured to be disposed on the perpendicular antiferromagnetic layer and having PMA, a tunneling barrier layer configured to be disposed on the first ferromagnetic layer, and a second ferromagnetic layer configured to be disposed on the tunneling barrier layer and having PMA. Therefore, the perpendicular antiferromagnetic layer generates perpendicular coupling at an interface with the perpendicular magnetic anisotropic inducing layer such that perpendicular coupling is further generated between the perpendicular antiferromagnetic layer and the first ferromagnetic layer.

Magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) having an oxide-based PMA-inducing layer and magnetic element including the same

A magnetic tunnel junction device and a manufacturing method therefor are provided. The magnetic tunnel junction device comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein the first ferromagnetic layer has a BCC (001) crystal structure and does not have boron. Therefore, the magnetic tunnel junction device, which is structurally and thermally more stable, can be provided by using the seed layer configured to assist the crystal growth of a boron-free magnetic layer in a BCC (001) direction and provide perpendicular magnetic anisotropy thereto, that is, WN or TaN which is a nitrogen-doped metal material having a cubic crystal structure and having a similar lattice constant to that of a magnetic layer material.

Magnetic tunnel junction element and manufacturing method therefor

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Seoul, South Korea

Gwangguk An