The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Mar. 22, 2017
Industry-university Cooperation Foundation Hanyang University, Seoul, KR;
Jinpyo Hong, Seoul, KR;
Gwangguk An, Seoul, KR;
Abstract
Disclosed herein are a magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy (PMA) and a magnetic element including the same. The MTJ structure with PMA includes a substrate, a perpendicular magnetic anisotropic inducing layer configured to be disposed on the substrate and including an oxide-based material, a perpendicular antiferromagnetic layer configured to be disposed on the perpendicular magnetic anisotropic inducing layer and including an antiferromagnetic material, a first ferromagnetic layer configured to be disposed on the perpendicular antiferromagnetic layer and having PMA, a tunneling barrier layer configured to be disposed on the first ferromagnetic layer, and a second ferromagnetic layer configured to be disposed on the tunneling barrier layer and having PMA. Therefore, the perpendicular antiferromagnetic layer generates perpendicular coupling at an interface with the perpendicular magnetic anisotropic inducing layer such that perpendicular coupling is further generated between the perpendicular antiferromagnetic layer and the first ferromagnetic layer.