Suwon, South Korea

Gwang-Won Lee

This inventor holds 1 USPTO granted patent. Top assignee: Skhynix Inc.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gwang-Won Lee. Retrieved from https://idiyas.com/inventor/gwang-won-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Gwang-Won Lee: Semiconductor Memory Device Inventor.

Introduction

Gwang-Won Lee is an inventor associated with Suwon, South Korea, and SK hynix Inc. His work includes a patent concerning semiconductor memory structures and their fabrication.

Latest Patents

Lee is credited with 1 patent, titled “Electronic Device and Method for Fabricating the Same.” The patent describes a semiconductor memory device with a substrate containing a region for memory cells and an adjacent region. It specifies memory cells that pass through an interlayer insulating layer, with carbon-containing conductive patterns at their uppermost portions, as well as an insulating carbon-containing pattern in the adjacent region.

Career Highlights

Lee’s listed patent reflects work on the structure and fabrication of electronic devices, particularly semiconductor memory. The disclosed design combines memory-cell features with carbon-containing patterns in different regions of the device.

Collaborations

The provided information lists In-Hoe Kim and Eung-Rim Hwang as Lee’s coworkers. Their names are associated with his professional context, though specific collaborative roles are not provided.

Conclusion

Gwang-Won Lee’s patent documents a semiconductor memory design involving carbon-containing patterns and fabrication methods, highlighting his contribution to electronic-device innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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