The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Mar. 14, 2017
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Jong-Young Cho, Hanam, KR;

Eung-Rim Hwang, Seoul, KR;

In-Hoe Kim, Seoul, KR;

Young-Min Na, Seoul, KR;

Gwang-Won Lee, Suwon, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 12/0831 (2016.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G06F 12/0802 (2016.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0831 (2013.01); G06F 12/0802 (2013.01); G06F 13/1673 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); G06F 2212/60 (2013.01); G06F 2212/621 (2013.01);
Abstract

An electronic device is provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a substrate including a first region in which a plurality of memory cells are disposed and a second region adjacent to the first region; a first interlayer insulating layer disposed over the substrate; a plurality of first memory cells penetrating through the first interlayer insulating layer in the first region, an uppermost portion of each memory cell of the first memory cells having a first conductive carbon-containing pattern; and a first insulating carbon-containing pattern located over the first interlayer insulating layer in the second region.


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