Guoxing Duan

Title: Guoxing Duan: Innovator in 3D NAND Technology

Introduction

Guoxing Duan is a notable inventor based in Boise, Idaho, recognized for his contributions to the field of semiconductor technology. He has made significant advancements in the design and functionality of 3D NAND storage devices. His innovative approach has led to the development of a patented technology that enhances the efficiency and performance of memory storage solutions.

Latest Patents

Duan holds a patent for a groundbreaking invention titled "3D NAND with integral drain-end select gate (SGD)." This patent describes a 3D NAND storage device that consists of multiple layers of doped semiconductor material interleaved with dielectric material layers. Each pillar in the 3D NAND structure contains several memory cells and a drain-end select gate. The design features a hollow channel that allows for the deposition of film layers, which can be tailored to optimize performance. This innovative arrangement enables the continuous deposition of channel film layers, enhancing the overall functionality of the memory cells.

Career Highlights

Guoxing Duan is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has positioned him at the forefront of technological advancements in memory storage. Duan's expertise and innovative mindset have contributed to the company's reputation for cutting-edge technology.

Collaborations

Duan has collaborated with esteemed colleagues, including David A. Daycock and Purnima Narayanan. These collaborations have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.

Conclusion

Guoxing Duan's contributions to 3D NAND technology exemplify the impact of innovative thinking in the semiconductor industry. His patented inventions and collaborative efforts continue to shape the future of memory storage solutions.