Tianjin, China

Guoqing Fan

This inventor holds 1 USPTO granted patent. Top assignee: Tcl Zhonghuan Renewable Energy Technology Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guoqing Fan. Retrieved from https://idiyas.com/inventor/guoqing-fan-xbd45tl7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Guoqing Fan and Silicon Charging Technology

Introduction

Guoqing Fan is an inventor based in Tianjin, China, associated with TCL Zhonghuan Renewable Energy Technology Co., Ltd. His patent work concerns silicon-material charging and single-crystal preparation.

Latest Patents

Fan is listed as an inventor on 1 patent: “Charging Method for Silicon Material and Preparation Method for Single Crystal.” The invention describes placing a first material layer in a crucible and covering it with a second layer during vacuuming. It also outlines a single-crystal preparation process in which a lid closes the crucible before it is vacuumed, after which the closed crucible is lifted into a single-crystal furnace and its pressure is relieved.

Career Highlights

Fan’s disclosed patent focuses on the handling of silicon materials during crucible charging and the preparation of single crystals. The described method is intended to protect the first material layer during vacuuming and to support the subsequent crystal-preparation process.

Collaborations

Fan is associated with TCL Zhonghuan Renewable Energy Technology Co., Ltd. His listed coworkers include Lin Wang and Zhi Yang.

Conclusion

Guoqing Fan’s patent activity centers on a silicon charging method and its application to single-crystal preparation, reflecting his work in an area relevant to renewable-energy technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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