The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Sep. 04, 2023
Applicant:

Tcl Zhonghuan Renewable Energy Technology Co., Ltd., Tianjin, CN;

Inventors:

Lin Wang, Tianjin, CN;

Guoqing Fan, Tianjin, CN;

Zhi Yang, Tianjin, CN;

Haoyang Wu, Tianjin, CN;

Long Xiang, Tianjin, CN;

Lei Li, Tianjin, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 15/14 (2006.01); C30B 15/20 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C30B 15/14 (2013.01); C30B 15/20 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01);
Abstract

A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.


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