Beijing, China

Guoqiang Bai

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Synopsys, Inc.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guoqiang Bai. Retrieved from https://idiyas.com/inventor/guoqiang-bai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Guoqiang Bai: Innovating Mask-Pattern Defect Analysis

Introduction

Guoqiang Bai is a prominent inventor based in Beijing, China. With a keen focus on innovations within the field of photolithography, he has contributed significantly to technology through his inventive prowess.

Latest Patents

Guoqiang Bai holds a noteworthy patent related to a "Spatial map of mask-pattern defects." This invention describes a technique for identifying defects in mask patterns during the photolithographic process. By calculating differences between a generated pattern at an image plane and a target pattern that excludes defects, the technology can determine defect information effectively. The outcome is a spatial map that provides valuable insights into the mask-pattern defects for users.

Career Highlights

Currently, Guoqiang Bai works at Synopsys, Inc., where he continues to drive innovations in technology. His expertise in the field of photolithography has established him as a key player in enhancing the precision and efficiency of semiconductor manufacturing processes.

Collaborations

Throughout his career, Guoqiang has collaborated with notable peers, including Jun Peng and Xin Zhou. These partnerships reflect a strong commitment to advancing technology and fostering innovation in the industry.

Conclusion

Guoqiang Bai's contributions to the field of photolithography exemplify the spirit of innovation. His patent on mask-pattern defects is a testament to his ingenuity and dedication to improving technology, showcasing the impact of inventors in the ever-evolving landscape of science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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