Chengdu, China

Guoliang Yao

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: University of Electronic Science and Technology of China. Active years: 2014.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014

Loading Chart...
1 patent (USPTO):Explore Patents

Title: **Guoliang Yao: Innovator in Semiconductor Power Devices**

Introduction

Guoliang Yao, a prominent inventor based in Chengdu, China, is recognized for his pioneering work in the field of semiconductor technology. His innovative contributions have led to the development of advanced semiconductor power devices, showcasing his expertise and commitment to enhancing the electrical engineering landscape.

Latest Patents

Yao holds a patent for his invention titled "Trench-type semiconductor power devices." The patent outlines a sophisticated semiconductor device featuring a semiconductor substrate that includes a semiconductor drift region composed of both a first and second conduction type. Notably, his design incorporates a superjunction structure, which improves device efficiency. Additionally, a high-K dielectric is utilized, enhancing the electrical performance of the device. The patent emphasizes a trench gate structure positioned adjacent to the active region, which is formed through innovative shallow angle ion implantation techniques. This results in a narrow width and high concentration of the second conduction type semiconductor region, marking a significant advancement in the field.

Career Highlights

Guoliang Yao is affiliated with the University of Electronic Science and Technology of China, where he actively engages in research and development. There, he collaborates with colleagues to further innovate in semiconductor technologies, fostering a dynamic environment of academic and practical exploration.

Collaborations

Throughout his career, Yao has worked closely with fellow researchers and innovators, notably Xiaorong Luo and Tianfei Lei. These collaborations have allowed him to blend diverse expertise and perspectives, ultimately enriching his contributions to semiconductor research.

Conclusion

Guoliang Yao's work exemplifies the spirit of innovation in the technology sector, particularly in semiconductor devices. His patent on trench-type semiconductor power devices not only reinforces his status as a leading inventor but also highlights the ongoing importance of research institutions in advancing technological solutions. With continued collaborations and dedication to his craft, Yao is poised to make even more significant impacts in the realm of electrical engineering.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…