The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Feb. 24, 2011
Xiaorong Luo, Chengdu, CN;
Guoliang Yao, Chengdu, CN;
Tianfei Lei, Chengdu, CN;
Yuangang Wang, Chengdu, CN;
BO Zhang, Chengdu, CN;
Xiaorong Luo, Chengdu, CN;
Guoliang Yao, Chengdu, CN;
Tianfei Lei, Chengdu, CN;
Yuangang Wang, Chengdu, CN;
Bo Zhang, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, CN;
Abstract
The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.