Beijing, China

Guohong Wang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2007-2010

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: **Innovator Spotlight: Guohong Wang**

Introduction

Guohong Wang, a distinguished inventor based in Beijing, China, has made significant contributions in the field of semiconductor technology. With a focus on Gallium Nitride (GaN) power LEDs, Wang holds two patents that showcase his innovative approach toward enhancing LED fabrication methods.

Latest Patents

Wang's latest patents emphasize advanced techniques in GaN LED manufacturing. The first patent, titled *Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings*, outlines a detailed process for creating these vital components. This method includes steps such as epitaxially growing N-GaN, active, and P-GaN layers on a substrate, followed by meticulous pattern etching and the formation of transparent, electrically conductive films. The thoroughness of this approach illustrates Wang's commitment to improving the efficiency and functionality of LED technology.

The second patent, *Method for manufacturing a GaN based LED of a black hole structure*, reveals an innovative process for producing LEDs with a black hole structure. This method entails the epitaxial growth of various GaN layers, precise etching techniques, and the integration of a heat sink for enhanced thermal management. Wang's inventive strategies are essential to advancing LED technology toward more efficient and reliable applications.

Career Highlights

Guohong Wang is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His work at this prestigious institution has not only positioned him as a leader in his field but has also allowed him to collaborate with prominent researchers and innovators.

Collaborations

Throughout his career, Wang has worked alongside accomplished colleagues, including Jinmin Li and Liangchen Wang. These collaborations have fostered an environment of knowledge exchange and innovation, further pushing the boundaries of GaN technology.

Conclusion

Guohong Wang's contributions to the field of semiconductor technology are noteworthy, particularly in the realm of GaN LEDs. His patents reflect a deep understanding of the complexities involved in LED fabrication. As Wang continues his work at the Chinese Academy of Sciences, his innovative spirit and collaborative endeavors promise to lead to even more advancements in the future.

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