Chinese Academy of Sciences

Guohong Wang

Jinmin Li

Liangchen Wang

Xiaodong Wang

Long Ma

Fuhua Yang

Zhongchao Fan

Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N&#x2014;GaN, active, and P&#x2014;GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N&#x2014;GaN electrode pattern; etching through that electrode pattern to form an N&#x2014;GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P&#x2014;GaN and N&#x2014;GaN layers; forming P&#x2014;GaN and N&#x2014;GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P&#x2014;GaN and N&#x2014;GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P&#x2014;GaN and N&#x2014;GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.

Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings

This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiOinsulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

Method for manufacturing a GaN based LED of a black hole structure

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Beijing, China

Guohong Wang