Guo-Zhou Huang

Title: Guo-Zhou Huang: Innovator in Semiconductor Technology

Introduction

Guo-Zhou Huang is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that addresses critical manufacturing challenges.

Latest Patents

Guo-Zhou Huang holds a patent for a semiconductor device and method of manufacture. This invention includes a first etch stop layer and a second etch stop layer designed to prevent delamination and damage to underlying components. The patent outlines a process where a first passivation layer and a second passivation layer are disposed on a substrate, with a metal pad exposed through these layers. The method ensures that the metal pad is protected from damage caused by delamination of the second etch stop layer by utilizing the first etch stop layer.

Career Highlights

Guo-Zhou Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on enhancing the reliability and performance of semiconductor devices through innovative manufacturing techniques.

Collaborations

Throughout his career, Guo-Zhou Huang has collaborated with notable colleagues, including Wei-Chun Liao and Huan-Kuan Su. These collaborations have contributed to advancements in semiconductor technology and have fostered a productive research environment.

Conclusion

Guo-Zhou Huang's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the manufacturing processes of semiconductor devices, ensuring greater reliability and performance.