Guo-Qiang Lo

Title: Guo-Qiang Lo: Innovator in Memory Technology

Introduction

Guo-Qiang Lo is a prominent inventor based in Singapore, known for his contributions to memory technology. He has made significant strides in the field of resistive access memory (RRAM), showcasing his innovative spirit and technical expertise.

Latest Patents

One of his notable patents is titled "Multi-step voltage for forming resistive access memory (RRAM) cell filament." This invention involves a memory device and method that includes a metal oxide material positioned between and in electrical contact with first and second conductive electrodes. The device is equipped with a voltage source that applies a series of voltage pulses, which are spaced apart in time across the electrodes. Notably, the amplitude of the voltage increases during each pulse, enhancing the functionality of the memory device.

Career Highlights

Guo-Qiang Lo is currently employed at Silicon Storage Technology, Inc., where he continues to develop cutting-edge memory solutions. His work has positioned him as a key player in the advancement of memory technology.

Collaborations

He collaborates with talented individuals such as Feng Zhou and Xian Liu, contributing to a dynamic and innovative work environment.

Conclusion

Guo-Qiang Lo's contributions to memory technology, particularly through his patent on RRAM, highlight his role as an influential inventor in the field. His ongoing work at Silicon Storage Technology, Inc. continues to push the boundaries of what is possible in memory devices.