Silicon Storage Technology, Inc.

Guo-Qiang Lo

Hieu Van Tran

Nhan Do

Hung Quoc Nguyen

Xian Liu

Feng Zhou

Mark Reiten

Zhixian Chen

Wang Xinpeng

A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.

Multi-step voltage for forming resistive access memory (RRAM) cell filament

Growing community of inventors

Singapore, Singapore

Guo-Qiang Lo