Company Filing History:

27 out of 14,705

Infineon Technologies Ag

patents

6 out of 244

Infineon Technologies North America Corp.

patents

2 out of 832,680

Other

patents

Years Active: 2001-2022

where 'Filed Patents' based on already Granted Patents

35 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11508417 - Memory cell device and method for operating a memory cell device (2022-11-22),

2. 11139003 - Memory cell device and method for operating a memory cell device (2021-10-05),

3. 10446219 - Memory device and methods for controlling a memory assist function (2019-10-15),

4. 9490206 - Electrical device and fabrication method (2016-11-08),

5. 9202538 - Wordline activation (2015-12-01),

6. 8274132 - Electrical device and fabrication method (2012-09-25),

7. 8143694 - Fuse device (2012-03-27),

8. 7738305 - Read-out circuit for or in a ROM memory; ROM memory and method for reading the ROM memory (2010-06-15),

9. 7684277 - Non-volatile memory device with controlled application of supply voltage (2010-03-23),

10. 7633787 - ROM memory component featuring reduced leakage current, and method for writing the same (2009-12-15),

11. 7457143 - Memory device with shared reference and method (2008-11-25),

12. 7436721 - Supplying voltage to a bit line of a memory device (2008-10-14),

13. 7403432 - Differential read-out circuit for fuse memory cells (2008-07-22),

14. 7394713 - Fuse memory cell with improved protection against unauthorized access (2008-07-01),

15. 7366002 - Method and storage device for the permanent storage of data (2008-04-29),

Title: Gunther Lehmann: Innovating Memory Cell Technologies

Introduction

Gunther Lehmann is an esteemed inventor based in Poughkeepsie, NY, renowned for his contributions to memory cell technologies. With an impressive portfolio of 35 patents, Lehmann has made significant strides in the field, focusing on innovative solutions that enhance memory cell devices.

Latest Patents

One of his latest patents, titled "Memory cell device and method for operating a memory cell device," showcases an advanced memory cell design comprising at least one memory cell. This device features a first switch and a second switch connected to a reference potential node, along with switch driver logic capable of placing the first switch in one of at least three operating states: an on state, an off state, and a conductive state. The conductive state varies the electrical conductivity of the first switch, providing flexibility and efficiency in operation.

Career Highlights

Throughout his career, Gunther Lehmann has been associated with leading organizations such as Infineon Technologies AG and Infineon Technologies North America Corporation. His work at these companies has solidified his expertise in semiconductor technologies and memory devices, paving the way for breakthroughs in the industry.

Collaborations

Lehmann has collaborated with notable professionals in the field, including Gerd Frankowsky and Siddharth Gupta. Their teamwork and shared vision have led to innovative advancements in memory technology, resulting in patents that continue to influence the market.

Conclusion

Gunther Lehmann stands out as a leading inventor in the realm of memory cell technology. His extensive patent portfolio and collaborations with renowned professionals reflect his commitment to advancing this crucial area of innovation. As technology evolves, Lehmann's contributions will undoubtedly play a pivotal role in shaping the future of memory devices.

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