Singapore, Singapore

Gunnar Zimmermann

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gunnar Zimmermann. Retrieved from https://idiyas.com/inventor/gunnar-zimmermann

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: The Innovations of Gunnar Zimmermann

Introduction

Gunnar Zimmermann is a notable inventor based in Singapore, SG. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of semiconductor discharge devices, which play a crucial role in modern electronic devices.

Latest Patents

Gunnar Zimmermann holds 1 patent for his invention titled "Semiconductor discharge devices and methods of formation thereof." In one embodiment, this method involves forming a well region within a substrate. A plurality of transistors is formed within and/or over the well region. The method further includes forming a first discharge device within the substrate, which is coupled to the well region and a low voltage node. During subsequent processing, the first discharge device discharges charge from the well region.

Career Highlights

Gunnar Zimmermann is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His expertise in semiconductor devices has contributed to the advancement of technology in various applications.

Collaborations

Gunnar has worked alongside talented colleagues such as Andreas Martin and Alfred Schuetz, enhancing the collaborative environment at Infineon Technologies AG.

Conclusion

Gunnar Zimmermann's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in the field. His contributions continue to shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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