The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Jan. 11, 2011
Applicants:
Alfred Schuetz, Germering, DE;
Andreas Martin, Munich, DE;
Gunnar Zimmermann, Singapore, SG;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a method of forming a semiconductor device includes forming a well region within a substrate. A plurality of transistors is formed within and/or over the well region. The method further includes forming a first discharge device within the substrate. The first discharge device is coupled to the well region and a low voltage node. During subsequent processing, the first discharge device discharges charge from the well region.