Gothenburg, Sweden

Gudjon I Gudjonsson

This inventor holds 1 USPTO granted patent. Top assignee: Nxp B.v.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gudjon I Gudjonsson. Retrieved from https://idiyas.com/inventor/gudjon-i-gudjonsson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Gudjon I Gudjonsson: Innovator in Semiconductor Technology

Introduction

Gudjon I Gudjonsson is a notable inventor based in Gothenburg, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods to enhance the performance of silicon carbide (SiC) devices. His innovative approach has led to advancements that are crucial for the future of electronic components.

Latest Patents

Gudjonsson holds a patent for a method aimed at improving inversion layer mobility in silicon carbide MOSFETs. The patent describes a manufacturing process that involves forming an oxide layer on a Si-terminated face of the SiC substrate at a high oxidation rate. This process achieves a near interface trap density below 5×10cm. Additionally, the oxidized SiC substrate is annealed in a hydrogen-containing environment to passivate deep traps formed during the oxide formation. This method enables the production of SiC-based MOSFETs with improved inversion layer mobility and reduced threshold voltage. The findings indicate that while the density of deep traps increases, the density of near interface traps decreases when the Si-face of the SiC substrate undergoes rapid oxidation. The passivation of deep traps through hydrogen annealing results in a significantly decreased threshold voltage for semiconductor devices formed on the oxide.

Career Highlights

Gudjonsson is currently employed at NXP B.V., a company known for its focus on semiconductor solutions. His work at NXP has allowed him to further explore and develop innovative technologies that enhance the performance of electronic devices. His expertise in semiconductor manufacturing processes has positioned him as a valuable asset in the industry.

Collaborations

Throughout his career, Gudjonsson has collaborated with notable colleagues, including Thomas Christian Roedle and Elnar O Sveinbjornsson. These collaborations have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Gudjon I Gudjonsson is a prominent figure in the semiconductor industry, recognized for his innovative methods that improve the performance of silicon carbide devices. His contributions are paving the way for advancements in electronic components, making a significant impact on the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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