Shanghai, China

Guanhua Yin

This inventor holds 2 USPTO granted patents. Top assignee: Sandisk Technologies Inc.. Active years: 2022-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guanhua Yin. Retrieved from https://idiyas.com/inventor/guanhua-yin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Guanhua Yin in Non-Volatile Memory Technology

Introduction

Guanhua Yin is a notable inventor based in Shanghai, China, recognized for his contributions to non-volatile memory technology. With a total of two patents to his name, Yin has made significant advancements in addressing challenges related to memory structures.

Latest Patents

Yin's latest patents include "Countermeasure modes to address neighbor plane disturb condition in non-volatile memory structures" and "Apparatus and methods for smart verify with neighbor plane disturb detection." The first patent outlines a method for programming non-defective planes in memory structures while managing disturbances from neighboring planes. This involves incrementing a loop count to determine when to cease programming incomplete planes and resume programming completed ones. The second patent describes an apparatus that includes non-volatile memory cells and a control circuit designed to perform program-verify iterations to ensure effective programming without defects.

Career Highlights

Guanhua Yin is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His work focuses on enhancing the reliability and efficiency of non-volatile memory systems, which are crucial for various electronic devices.

Collaborations

Throughout his career, Yin has collaborated with talented colleagues such as Xuan Tian and Liang Li. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in the memory sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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